AN ANALYTICAL FULLY-DEPLETED SOI MOSFET MODEL CONSIDERING THE EFFECTSOF SELF-HEATING AND SOURCE DRAIN RESISTANCE/

In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET's applicable for circuit simulation, The mod el was developed by using a two-dimensional (2-D) Poisson equation, an d considering the source/drain resistance and the self-heating effect, using the present model, we can clearly see that the reduction of dra in current with the parasitic series resistance and self-heating effec t for typical SOI devices, We also can evaluate the impact of series r esistance and self-heating effects, The accuracy of the presented mode l has been verified with the experimental data of SOI MOS devices with various geometries.