A 0.1-MU-M DELTA-DOPED MOSFET FABRICATED WITH POST-LOW-ENERGY IMPLANTING SELECTIVE EPITAXY

A simple fabrication technology for delta-doped MOSFET's, named post-l ow-energy implanting selective epitaxy (PLISE) is presented, The PLISE technology needs no additional photo-lithography mask, deposition ste p or etching step even for CMOS devices, The only additional step is g rowing undoped epitaxial channel layers by UHV-CVD after the channel i mplantation, With this technology, the delta-doped NMOSFET's with 0.1- mu m gate length were successfully fabricated. By optimizing the epi-l ayer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-mu m gate length, Moreover, the junc tion capacitance at zero bias is reduced by 50%.