DYNAMIC MODELING OF AMORPHOUS-SILICON AND POLYCRYSTALLINE-SILICON DEVICES

The materials of which thin-film transistors (TFT's) are fabricated ar e characterized by a large amount of defects, giving rise to localized states with a complex energy distribution within the gap, As a conseq uence, the electrical characteristics of TFT's are difficult to model analytically, and a numerical approach may he preferred to predict the ir performance. A new efficient. method is presented to solve the time -dependent semiconductor equations accounting for energy-distributed g ap states. Applications are provided to the analysis of realistic devi ces and inverters.