A MULTICOMB VARIANCE REDUCTION SCHEME FOR MONTE-CARLO SEMICONDUCTOR SIMULATORS

Authors
GRAY MG BOOTH TE KWAN TJT SNELL CM
Citation
Mg. Gray et al., A MULTICOMB VARIANCE REDUCTION SCHEME FOR MONTE-CARLO SEMICONDUCTOR SIMULATORS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 918-924
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
4
Year of publication
1998
Pages
918 - 924
Database
ISI
SICI code
0018-9383(1998)45:4<918:AMVRSF>2.0.ZU;2-R
Abstract
We adapt a multicomb variance reduction technique used in neutral part icle transport to Monte Carlo microelectronic device modeling, We impl ement the method in a two-dimensional (2-D) MOSFET device simulator an d demonstrate its effectiveness in the study of hot electron effects. Our simulations shaw that the statistical variance of hot electrons is significantly reduced with minimal computational cost, The method is efficient, versatile, and easy to implement in existing device simulat ors.