HETEROEPITAXIAL GROWTH OF BEXZN1-XSE ON SI(001) AND GAAS(001) SUBSTRATES

The growth of BexZn1-xSe alloys has been investigated by molecular bea m epitaxy on Si(0 0 1) and GaAs(0 0 1). The best results concerning Be Se have been obtained on Si(0 0 1) substrates with miscut of 4 degrees towards [1 1 0], at growth temperatures of at least 500 degrees C and with low growth rates of 0.1-0.2 Angstrom/s. A lattice parameter of 5 .139 +/- 0.002 Angstrom has been measured on a 1 mu m thick layer. The direct bandgaps of BexZn1-xSe alloys have been measured through photo luminescence and reflectivity experiments. However, these optical stud ies have not been able to draw yet a conclusion on the existence of a direct-indirect bandgap transition. (C) 1998 Elsevier Science B.V. All rights reserved.