LATTICE-MATCHED ZN1-YCDYSE INXGA1-XAS(001) HETEROSTRUCTURES/

In1-xGaxAs buffer layers grown on GaAs(0 0 1) wafers can be used as no vel substrates lattice matched to the Zn1-yCdySe active layers employe d in blue-green lasers. Photoluminescence studies of Zn1-yCdySe alloys (x = 0.15 and 0.25) grown by molecular beam epitaxy on such substrate s show a dramatic reduction in the deep-level emission as compared to Zn1-yCdySe/GaAs(0 0 1) heterostructures. The surface of the epilayers, however, exhibits a cross-hatched morphology as a result of similar t o 10 nm deep surface corrugations oriented along perpendicular (1 1 0) directions. (C) 1998 Elsevier Science B.V. All rights reserved.