CDSE ZNSE STRAINED-LAYER SUPERLATTICES GROWN ON INP/

ZnCdSe alloy and CdSe/ZnSe strained layer superlattices were grown on InP substrates by molecular beam epitaxy. We could reduce the substrat e temperature during surface cleaning by the use of(NH4)(2)S-x treatme nt after etching, which prevented P desorption. Photoluminescence meas urements at 16 K showed strong emission from ZnCdSe grown with the (NH 4)(2)S-x treatment. CdSen/ZnSen superlattices were grown with n = 2-10 . Structural characterization by X-ray diffraction measurements reveal ed well-defined satellite peaks. The diffraction patterns correspondin g to CdSe and ZnSe lattice spacings were observed as envelopes of sate llite peaks. Near band edge and deep-defect related emissions were see n in photoluminescence. The peak energy shifted with changing superlat tice period. (C) 1998 Elsevier Science B.V. All rights reserved.