GROWTH OF ZNSE ON MISORIENTED GAAS(110) SURFACE BY MOLECULAR-BEAM EPITAXY

Heteroepitaxial layers of ZnSe were grown on GaAs(1 1 0)-just and miso riented GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). Facet fr ee ZnSe heteroepitaxial films are achieved by growth on GaAs(1 1 0)6 d egrees-off substrates, while ZnSe on GaAs(1 1 0)-just shows the format ion of facets aligned along the [0 0 1] direction. A very low etch-pit density (EPD), similar to 10(4)/cm(2), is achieved for ZnSe on GaAs(1 1 0) 6 degrees-off surface without the use of GaAs buffer layer. Chan neling backscattering spectra and X-ray rocking curve results show tha t good heterointerface and epitaxial layers, grown in the same orienta tion as the GaAs(1 1 0)substrate, are obtained. (C) 1998 Elsevier Scie nce B.V. All rights reserved.