MOLECULAR-BEAM EPITAXY OF WURTZITE CDSE ON GAAS(111) SUBSTRATES

Wurtzite-CdSe epitaxial layers on GaAs(1 1 1)A and B substrates were g rown by molecular beam epitaxy using elemental Cd and Se beams. A dist inct RHEED oscillation of a specular spot intensity was observed durin g ALE growth of CdSe on GaAs(1 1 1)B, but the oscillation on GaAs(1 1 1)A was poor. A GaAs(1 1 1)B substrate is superior to GaAs(1 1 1)A sub strate for the layer-by-layer growth of wurtzite CdSe. The activation energy of Se desorption from the GaAs(1 1 1)B surface was determined a s 1.2 +/- 0.1 eV by analyzing the temporal specular beam intensity. Th e crystallographic and luminescence properties are also presented. (C) 1998 Elsevier Science B.V. All rights reserved.