STRUCTURAL-PROPERTIES OF ZNTE ZN(S,TE)-SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY ON (001)GAAS-SUBSTRATES/

ZnTe-Zn(S,Te) short-period superlattices have been grown on (0 0 1) Ga As-substrates with very good structural quality. The growth conditions were found to be quite reproducible, leading to a series of samples w ith periods between 1? and 29 Angstrom. Characterisation of the sample s with high-resolution X-ray diffraction confirmed the high structural quality of the structures, showing that all samples are pseudomorphic ally grown. The relaxation behaviour is strongly influenced by the ZnT e-well width with two critical ZnTe-thicknesses observable. (C) 1998 E lsevier Science B.V. All rights reserved.