ZNSE ZNMGSSE QW STRUCTURES GROWN BY MOVPE ON ZNSE(100), ZNSE(511) ANDGAAS(100) SUBSTRATES/

Both ZnMgSSe epilayers and ZnSe/ZnMgSSe QW structures with mirror-like surfaces were grown on ZnSe(1 0 0), ZnSe(5 1 1) and GaAs(1 0 0) by LP -MOVPE using DTBSe, DTBS, DMZn(TEN), (MeCp)(2)Mg as precursors and H-2 as carrier gas. The ZnSe substrates were cut from single crystals gro wn by seeded chemical vapour transport (SCVT) in hydrogen. A comparati ve study of the structures by photoluminescence (PL), cathodoluminesce nce (CL), X-ray diffraction and microanalysis was performed. Using a 5 QW ZnSe/ZnMgSSe structure grown on ZnSe(5 1 1), a cleaved-face laser was realized under pulsed e-beam excitation at room temperature(RT). ( C) 1998 Elsevier Science B.V. All rights reserved.