STRUCTURAL CHARACTERIZATION OF MOVPE GROWN ZNMGSSE ZNSE HETEROSTRUCTURES BY HRXRD/

The correlation of the properties of ZnMgSSe/ZnSe heterostructures to the Mg and S content as well as to the perpendicular strain of the ZnM gSSe layer was studied by high-resolution X-ray diffractometry (HRXRD) and photoluminescence spectroscopy (PL). ZnMgSSe/ZnSe heterostructure s were grown on GaAs by MOVPE. The nominal thickness of the quaternary layer was about 250 nm. The S and Mg content ranged from about 10 to 40%. An in-depth compositional gradient was observed in the quaternary layer. Moreover, a significant broadening effect bath in the X-ray ro cking curve and in the PL emission was observed with increasing Mg and S contents. The FWHM of PL peaks increases nearly with the perpendicu lar strain of the quaternary layer. (C) 1998 Elsevier Science B.V. All rights reserved.