RAPID THERMAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF II-VI COMPOUNDS

In this paper we analyze the potential benefits of rapid thermal proce ssing combined with metalorganic chemical vapor deposition (RT-MOCVD) for II-VI compounds and review our first results of the application of RT-MOCVD to the growth of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe hete rostructures. The RT-MOCVD growth of(1 1 1) CdTe and ZnTe was performe d in the A.G. Associates Heatpulse CVD-800 (TM) system using a horizon tal quartz reactor heated from both sides by tungsten-halogen lamps. T he main features of RT-MOCVD of II-VI materials are: very high growth rates (up to 60 mu m/h for CdTe and 30 mu m/h for ZnTe); low point def ect densities in the epilayers; more abrupt interfaces and less substr ate surface degradation compared to conventional MOCVD. Potential of R T-MOCVD for MCT passivation has been shown. (C) 1998 Elsevier Science B.V. All rights reserved.