PRODUCTION SCALE MOCVD GROWTH OF II-VI SEMICONDUCTORS

The growth of II-VI semiconductors is performed in MOCVD systems (AIX 200 and AIX 200/4) with a capacity of one 2 in and one 4 in wafer or e quivalent, respectively, on 2 in substrates. The growth of ZnSe, ZnSSe and ZnMgSSe has been carried out with several different precursor mat erials. The growth rate and composition homogeneities across a 2 in wa fer for ZnSe and ZnSSe, with and without rotation of the susceptor, we re investigated. The growth rate homogeneity for ZnSe was calculated t o be +/-2%. The fabrication technology can be easily transferred to mu ltiwafer reactors for the production of devices. Homogeneities in the range of +/-1% are expected, due to the unique design with double rota tion of the substrates. (C) 1998 Elsevier Science B.V. All rights rese rved.