CHARACTERIZATION AND CONTROL OF II-VI III-V HETEROVALENT INTERFACES/

We have systematically studied the structure, chemical composition, an d formation processes of ZnSe/GaAs(0 0 1) interfaces where heterovalen cy plays an important role. Prior to ZnSe growth, the initial surfaces were prepared by exposing differently reconstructed GaAs surfaces to a beam of Zn, Se, or Te. It has been shown that the structure and the composition of this interface can be well controlled by the preparatio n procedures of initial GaAs surfaces. We have also found that generat ion of the faulted defects in ZnSe films is closely related with the f ormation of interface layers. (C) 1998 Elsevier Science B.V. All right s reserved.