TRANSITIVITY OF THE BAND OFFSETS IN II-VI III-V HETEROJUNCTIONS/

The band discontinuities in ZnSe/AlAs(0 0 1) heterojunctions fabricate d by molecular beam epitaxy are found to depend on the local interface composition in a manner reminiscent of what was found earlier for ZnS e/GaAs(0 0 1) heterojunctions. Se-rich interface compositions correspo nd to valence band offsets as low as 0.2 eV, while Zn-rich interface c ompositions yield valence band offsets as high as 0.9 eV. When similar interface compositions are considered, the band offsets for ZnSe/AlAs and ZnSe/GaAs heterojunctions follow the predictions of the transitiv ity rule. (C) 1998 Elsevier Science B.V. All rights reserved.