A RAMAN-STUDY OF COUPLED PLASMON LO PHONON MODES AT ZNSE-GAAS INTERFACES

Authors
PAGES O SOLTANI M ZAOUI A CERTIER M LAURENTI JP CLOITRE T AULOMBARD RL BORMANN D KHELIFA B
Citation
O. Pages et al., A RAMAN-STUDY OF COUPLED PLASMON LO PHONON MODES AT ZNSE-GAAS INTERFACES, Journal of crystal growth, 185, 1998, pp. 188-192
Citations number
5
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
188 - 192
Database
ISI
SICI code
0022-0248(1998)185:<188:AROCPL>2.0.ZU;2-7
Abstract
Raman scattering is used to investigate p-type accumulation zones on t he substrate side of ZnSe-GaAs heterostructures. The intensity imbalan ce between (i) the near-interfacial phonon-plasmon coupled mode locate d below the TO frequency and (ii) the uncoupled LO mode from the deep substrate, is studied at a single wavelength under increasing illumina tion. Competition between electric field-induced scattering and more t rivial scattering volume effects is discussed. (C) 1998 Elsevier Scien ce B.V. All rights reserved.