SCHOTTKY-BARRIER TUNABILITY IN AL ZNSE INTERFACES/

The Schottky barrier for Al/ZnSe (0 0 1) junctions was determined in s itu by X-ray photoemission spectroscopy following Al deposition on ZnS e (0 0 1) c(2 x 2), ZnSe (0 0 1) 2 x 1, or ZnSe (0 0 1) 1 x 1 surfaces fabricated by molecular beam epitaxy. While similar values of the bar rier were found on the first two types of interfaces, the p-type Schot tky barrier was 0.24 eV lower for the third type of interface. (C) 199 8 Elsevier Science B.V. All rights reserved.