ASSIGNMENT OF REFLECTANCE DIFFERENCE SPECTROSCOPY PEAKS TO II-VI SURFACE-LAYERS

Using reflectance difference spectroscopy, we investigate in situ the interface and surface anisotropies and bonding conditions of molecular beam epitaxial grown ZnSe and CdTe layers using GaAs (0 0 1) as subst rate, simultaneously characterized by reflection high-energy electron diffraction. The thermally cleaned GaAs (0 0 1) surface shows typicall y a (4 x 6) reconstruction. In this work we tackle the problem of assi gning spectral features in reflectance difference spectroscopy to spec ific surface terminations. One major goal is to determine the differen ce between topmost cation and anion layers. (C) 1998 Published by Else vier Science B.V. All rights reserved.