INVESTIGATION OF THE SURFACTANT EFFECT OF SN IN ZNSE BY REFLECTANCE DIFFERENCE SPECTROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

We have studied the surfactant effect of Sn on ZnSe(0 0 1) growth by m olecular beam epitaxy equipped with in-situ reflection high-energy ele ctron diffraction and reflectance difference spectroscopy and in-line Auger electron spectroscopy. Sn deposited on the Zn stabilized c(2 x 2 ) ZnSe surface showed surface segregation, while Sn deposited on the S e-stabilized (2 x 1) surface does not segregate to the growing surface . We have demonstrated that Sn deposited on the Zn stabilized ZnSe sur face improve two-dimensional growth in highly strained CdSe/ZnSe syste m. (C) 1998 Elsevier Science B.V. All rights reserved.