Self-organized CdSe quantum dots (SQDs) were grown by atomic layer epi
taxy (ALE). As a buffer layer we used the nearly atomically flat surfa
ce of thin (1 1 1)A ZnSe layers grown on (1 1 1)A GaAs. In this specia
l system we find, due to the enhanced surface diffusion, formation of
coherently strained islands (coherent Stranski-Krastanow islanding) al
ready well below the critical thickness ( similar to 3 monolayers) of
CdSe on ZnSe. An increase in the material deposition leads to an incre
ase in the density of the dots rather than a change in average base di
ameter (47 +/- 5 nm). The strongly blue shifted emission energy of typ
ically 2.3 eV corresponds to an ZnCdSe alloy with approximately 50% of
Zn. Micro-Auger measurements were used to determine the wetting layer
thickness. (C) 1998 Elsevier Science B.V. All rights reserved.