3-DIMENSIONALLY CONFINED EXCITONS IN MOCVD-GROWN ULTRATHIN CDSE DEPOSITIONS IN ZNSSE MATRIX

Authors
ENGELHARDT R TURCK V POHL UW BIMBERG D VEIT P
Citation
R. Engelhardt et al., 3-DIMENSIONALLY CONFINED EXCITONS IN MOCVD-GROWN ULTRATHIN CDSE DEPOSITIONS IN ZNSSE MATRIX, Journal of crystal growth, 185, 1998, pp. 311-314
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
311 - 314
Database
ISI
SICI code
0022-0248(1998)185:<311:3CEIMU>2.0.ZU;2-G
Abstract
Up to 3 monolayer (ML) thick highly strained CdSe insertions in lattic e matched ZnSSe/GaAs were grown by metalorganic chemical vapor deposit ion (MOCVD). The samples show a bright photoluminescence band near the barrier band edge exhibiting a strong red shift with increasing CdSe deposition. The assignment to recombinations of three-dimensionally co nfined excitons is confirmed by cathodoluminescence. An additional-low energy band appearing for thicker CdSe depositions is attributed to d efects. (C) 1998 Elsevier Science B.V. All rights reserved.