ATOMIC NITROGEN DOPING IN P-ZNSE WITH HIGH ACTIVATION RATIO USING A HIGH-POWER PLASMA SOURCE

Authors
KIMURA K MIWA S JIN CG KUO LH YASUDA T OHTAKE A TANAKA K YAO T KOBAYASHI H
Citation
K. Kimura et al., ATOMIC NITROGEN DOPING IN P-ZNSE WITH HIGH ACTIVATION RATIO USING A HIGH-POWER PLASMA SOURCE, Journal of crystal growth, 185, 1998, pp. 411-414
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
411 - 414
Database
ISI
SICI code
0022-0248(1998)185:<411:ANDIPW>2.0.ZU;2-4
Abstract
The p-type doping in ZnSe molecular-beam epitaxial growth was studied using a high-power plasma source. The effect of growth conditions on p -ZnSe:N was investigated. An activation ratio of almost 100% with net acceptor concentration (N-A-N-D) of around 1 x 10(18) cm(-3) was repro ducibly achieved. The 4.2 K PL spectrum of p-ZnSe:N with high N-A-N-D (similar to 1 x 10(18) cm(-3)) shows high crystal quality. (C) 1998 El sevier Science B.V. All rights reserved.