HEAVILY-DOPED P-TYPE ZNSE LAYER FORMATION BY EXCIMER-LASER DOPING

On the wide band gap II-VI semiconductor ZnSe, an alkaline compound su ch as K2S and Na2Se was deposited with thickness 50 nm and the surface was irradiated by an excimer laser with power 350 mJ/cm(2) and pulse duration 20 ns. After the laser irradiation, the samples were annealed at 550 degrees C for 10 min. The resistivity in the Hall measurement drastically decreased from 10(5) to 3 x 10(-2) Omega cm and the value of the hole carrier concentration increased up to 4.8 x 10(19) cm(-3). This technique has quite high potential for making ohmic contact to w ide gap materials and hence for device fabrication. (C) 1998 Elsevier Science B.V. All rights reserved.