NITROGEN DOPING OF TE-BASED II-VI HETEROSTRUCTURES

The growth conditions and the electrical properties of modulation-dope d Cd1-xMnxTe/Cd1-y-zZnzMgyTe : N (0 less than or equal to x less than or equal to 0.05) quantum well structures, in which a ferromagnetic tr ansition has been observed, are presented. The growth temperature, the design of the structure and the composition of layers must be control led with a greater care than in undoped samples. Ohmic contacts have b een realised on a single quantum well structure by growing a compositi on graded layer at the surface. (C) 1998 Published by Elsevier Science B.V. All rights reserved.