STEP DENSITY-DEPENDENCE OF ACCEPTOR CONCENTRATION IN LI-DOPED ZNSE GROWN ON MISORIENTED GAAS(001)

Li-doped ZnSe films have been grown on misoriented GaAs(0 0 1) substra tes by molecular-beam epitaxy to investigate the effects of step densi ty on the electrical and the optical properties. We found that the net acceptor concentration in Li-doped ZnSe has a strong relationship wit h the step density on the GaAs substrates and the misorientation direc tion. The net acceptor concentration on the off-substrate towards [1 1 0] is higher than that on the off-substrate towards [1 (1) over bar 0 ]. The difference in Li concentration can be explained by the doping e fficiency and the generation of donor-like centers. (C) 1998 Elsevier Science B.V. All rights reserved.