We measured the time-resolved photoluminescence of ZnSe:Li bulk crysta
ls and ZnSe:N heteroepitaxial layers in the donor-acceptor-pair (DAP)
transition region. We found nonexponential decay curves for all sample
s and all spectral positions except for luminescence from nearest DAPs
. It is shown that the approach by Thomas et al. perfectly describes t
his overall behaviour for ZnSe:Li as well as for ZnSe:N if, for the la
tter, transitions from the deep donor to the shallow nitrogen acceptor
are considered. Our fit of the decay curves yields a binding energy o
f (50 +/- 2) meV for the deep nitrogen-related donor with an effective
Bohr radius of(22.8 +/- 0.6) Angstrom. (C) 1998 Elsevier Science B.V.
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