OPTICAL-PROPERTIES OF LASER-DIODES AND HETEROSTRUCTURES BASED ON BERYLLIUM CHALCOGENIDES

Laser diodes and heterostructures based on beryllium chalcogenides hav e been characterized optically by means of photoluminescence and photo luminescence excitation spectroscopy in the temperature range from 1.6 to 300 K. The study was performed on real lasing structures. An effic ient photoluminescence at room temperature was observed in heterostruc tures with (ZnCd)Se and (BeZnCd)Se quantum wells (L-z = 100 Angstrom). The decrease of the luminescence intensity with increasing temperatur e is similar for both quantum well materials. Analyzing the temperatur e-dependent photoluminescence excitation spectra of laser structures, we have determined the efficiency of carrier collection into the activ e layer. At temperatures above 150 K all carriers from the 2000 Angstr om thick (BeZn)Se waveguide are collected into the active layer. (C) 1 998 Elsevier Science B.V. All rights reserved.