LATERAL AND LONGITUDINAL MODE CONTROL IN CDZNSE-BASED LASER-DIODES

Citation
D. Eisert et al., LATERAL AND LONGITUDINAL MODE CONTROL IN CDZNSE-BASED LASER-DIODES, Journal of crystal growth, 185, 1998, pp. 558-561
Citations number
10
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
558 - 561
Database
ISI
SICI code
0022-0248(1998)185:<558:LALMCI>2.0.ZU;2-A
Abstract
Lateral patterning techniques have been applied to control the transve rsal and longitudinal mode structure in ZnSe-based laser diodes. For r idge wave-guide lasers with a stripe width L-x of less than 5 mu m, pr edominantly lateral single-mode emission was observed in the near-fiel d and the far-field emission patterns. For the ratio of the vertical a nd the lateral far-field angle a factor of about 4.4 was obtained. Lon gitudinal mode control was realized using first-order distributed Brag g reflectors with periods between 95 and 102 nm for an emission in the blue and green spectral range. A side-mode suppression of up to 25 dB could be achieved. (C) 1998 Elsevier Science B.V. All rights reserved .