EFFICIENT LATERAL INDEX GUIDING OF II-VI LASER STRUCTURES BY IMPLANTATION-INDUCED DISORDERING

Implantation-induced disordering in ZnCdSe-based quantum wells and sup erlattices is investigated and used to generate lateral index-guided l aser structures. The structures are implanted with Nitrogen at doses o f 1 x 10(15)-4 x 10(15) cm(-2) at energies ranging between 110 and 230 keV and subsequently annealed at temperatures up to 460 degrees C in Zn-atmosphere. Distinct intermixing is identified by secondary-ion-mas s-spectroscopy. Lateral selective implantation is performed by using s tripe masks 5-30 mu m wide. Lateral selectivity is proven by cathodolu minescence. Waveguiding of selectively implanted superlattices and las er structures is demonstrated by recording the near-field pattern. The implanted structures exhibit index guiding with and without subsequen t annealing, demonstrating that index guiding is already achieved by t he weak intermixing induced by implantation. (C) 1998 Elsevier Science B.V. All rights reserved.