DEFECT ANNEALING IN A II-VI LASER-DIODE STRUCTURE UNDER INTENSE OPTICAL-EXCITATION

Authors
JORDAN C FEWER DT DONEGAN JF LOGUE FP MCCABE EM HUYNH A TANIGUCHI S HINO T NAKANO K ISHIBASHI A
Citation
C. Jordan et al., DEFECT ANNEALING IN A II-VI LASER-DIODE STRUCTURE UNDER INTENSE OPTICAL-EXCITATION, Journal of crystal growth, 185, 1998, pp. 585-586
Citations number
3
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
585 - 586
Database
ISI
SICI code
0022-0248(1998)185:<585:DAIAIL>2.0.ZU;2-#
Abstract
We have found a non-thermal annealing effect in II-VI quantum well mat erials under intense optical excitation. Pumping with 1 kW/cm(2) into the barrier regions with a spot size of 20 mu m increases the local ph otoluminescence efficiency compared with the surrounding un-annealed m aterial. We believe that the annealing is due to recombination enhance d defect reactions. (C) 1998 Elsevier Science B.V. All rights reserved .