STRUCTURAL-PROPERTIES OF HOMOEPITAXIAL AND HETEROEPITAXIAL ZNSE-BASEDLASER STRUCTURES

High-resolution X-ray diffraction has been used for the structural cha racterization of hetero-and homoepitaxial ZnSe-based laser structures. A common problem of both kinds of conventional laser structures conta ining sulphur is the formation of composition gradients in the thick q uaternary layers. In addition to depth gradients within the single cla dding layers, a composition shift between the n-type and the p-type si de of the laser structures has been observed. Clear differences betwee n homoepitaxial and heteroepitaxial samples were found with respect to the strain relaxation. (C) 1998 Elsevier Science B.V. All rights rese rved.