SATURATION OF OPTICAL GAIN IN ZNSE HETEROSTRUCTURES

Authors
KALT H UMLAUFF M KRAUSHAAR M SCHOLL M SOLLNER J HEUKEN M
Citation
H. Kalt et al., SATURATION OF OPTICAL GAIN IN ZNSE HETEROSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 627-631
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
627 - 631
Database
ISI
SICI code
0022-0248(1998)185:<627:SOOGIZ>2.0.ZU;2-2
Abstract
The optical gain in ZnSe heterostructures is investigated by the varia ble stripe length method (VSLM). Saturation of the gain occurs due to the interaction of the carrier and photon densities which leads to an inhomogeneous electron-hole pair distribution along the excited stripe . This inhomogeneity is tested by spatially resolved pump-probe spectr oscopy and compared to calculations based on a rate-equation model. (C ) 1998 Elsevier Science B.V. All rights reserved.