QUANTUM-CONFINED STARK-EFFECT IN ZNCDSE MGZNCDSE MULTIPLE-QUANTUM WELLS GROWN ON INP SUBSTRATES/

ZnCdSe/MgZnCdSe multiple quantum well (MQW) devices were fabricated on InP substrates by molecular beam epitaxy, and quantum-confined Stark effect (QCSE) in the devices were investigated by measurements of refl ectance variations at the top surface and absorption coefficient varia tions in the MQW region with changing applied voltage at room temperat ure. As a result, remarkable reflectance variations were observed near 587 nm wavelength, accompanied by red shifts of the transition wavele ngth with increasing applied voltage. A maximum reflectance variation of 5.2% was obtained under the applied voltage of -7.5 V (the electric field of 1.9 x 10(5) V/cm). From the electromagnetic analysis of the device structure. the refractive index variation of 2.4% per well in t he MQW was theoretically estimated for the maximum reflectance variati on. (C) 1998 Elsevier Science B.V. All rights reserved.