QUANTUM MICROCAVITIES IN II-VI SEMICONDUCTORS - STRONG-COUPLING REGIME IN VERTICAL-CAVITY LASERS

Citation
P. Kelkar et al., QUANTUM MICROCAVITIES IN II-VI SEMICONDUCTORS - STRONG-COUPLING REGIME IN VERTICAL-CAVITY LASERS, Journal of crystal growth, 185, 1998, pp. 745-749
Citations number
11
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
745 - 749
Database
ISI
SICI code
0022-0248(1998)185:<745:QMIIS->2.0.ZU;2-T
Abstract
Enhanced light-matter coupling effects are striking in II-VI quantum w ell microresonators, with the normal mode (Rabi) splitting exceeding 1 0 meV per quantum well at the exciton resonance in ZnSe-based heterost ructures. Such a dominating imprint of the mixed exciton-photon modes extends to high electron-hole pair densities, including the regime of vertical cavity laser operation. We present results from gain spectros copy to show how the composite photon-exciton oscillator supplies opti cal gain for a laser operating beyond the conventional perturbative re gime. (C) 1998 Published by Elsevier Science B.V. All rights reserved.