HIGH-MOBILITY 2D ELECTRON-GAS IN IODINE MODULATION-DOPED CDTE CDMGTE HETEROSTRUCTURES/

Authors
KARCZEWSKI G JAROSZYNSKI J BARCZ A KUTROWSKI M WOJTOWICZ T KOSSUT J
Citation
G. Karczewski et al., HIGH-MOBILITY 2D ELECTRON-GAS IN IODINE MODULATION-DOPED CDTE CDMGTE HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 814-817
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
814 - 817
Database
ISI
SICI code
0022-0248(1998)185:<814:H2EIIM>2.0.ZU;2-F
Abstract
We report on growth and characterization of modulation doped CdTe/Cd1- yMgyTe quantum well structures. Well resolved Shubnikov-de Haas oscill ations and quantum Hall effect have been observed. In the best CdTe/Cd 1-yMgyTe structures the modulation doping enabled fabrication of a two -dimensional electron gas with mobility exceeding 10(5) cm(2)/V s. Thi s is the highest mobility reported in wide-gap II-VI materials. (C) 19 98 Elsevier Science B.V. All rights reserved.