We investigated the well-width dependence of the carrier spin relaxati
on in CdTe/Cd1-xMnxTe quantum wells. We found that the electron-spin r
elaxation time decreases dramatically with decreasing well width, whil
e the heavy-hole spin relaxation is not changed so much with the well
width. The electron-spin relaxation rate is fairly proportional to the
overlap between the electron wave function and the Mn ions in the mag
netic barrier layer. This suggests that the electron spin scattering i
s caused by the interaction with Mn2+ ions. From the analysis of the s
pin-dependent spectral change, it was found that the peak shift reflec
ts the population dynamics more directly. (C) 1998 Elsevier Science B.
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