CDTE AND CDTE-CL VAPOR GROWTH IN A SEMICLOSED SYSTEM

Citation
T. Kunz et al., CDTE AND CDTE-CL VAPOR GROWTH IN A SEMICLOSED SYSTEM, Journal of crystal growth, 185, 1998, pp. 1005-1009
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
1005 - 1009
Database
ISI
SICI code
0022-0248(1998)185:<1005:CACVGI>2.0.ZU;2-H
Abstract
Undoped and chlorine-doped CdTe single crystals of 2.4 cm diameter wer e grown from the vapour phase by a modified Markov method. Boundary co nditions for the control of partial pressures were realized applying a heat sink at different temperatures. The influence of the sink on dop ant incorporation was investigated by photoluminescence. Transitions o f free and bound excitons dominate the PL spectra in cases of undoped CdTe. The characteristic luminescence of the A-centre was identified i n CdTe : Cl. Alpha measurements yielded a product of carrier mobility and lifetime of 2 x 10(-4) cm(2)/V. (C) 1998 Elsevier Science B.V. All rights reserved.