NEW RESULTS ON THE SOLID-PHASE RECRYSTALLIZATION OF ZNSE

New results are given on the solid-phase recrystallisation growth of Z nSe. The orientation relationship between initial texture of the start ing material and SPR grown crystals is studied by X-ray diffraction. T wins are shown to be already present in the micrograins of the source material from SEM and TEM observations. Some attempts to decrease twin ning using the strain-anneal method are reported. The SPR kinetics is studied under both Se and Zn pressure. The SPR growth is shown to be i nhibited by residual donor impurities that have been identified to be mainly Al, Cl and In by photoluminescence and resonant Raman scatterin g experiments. Given the significant role of native defects in the SPR growth kinetics, the concentration of Zn vacancies is roughly estimat ed from lattice parameters measurements to be about 10(19) cm(-3) in t he Se-rich samples by means of a vacancy model. Low-resistive n-type c rystals are obtained by Al diffusion from Al-doped molten zinc. (C) 19 98 Elsevier Science B.V. All rights reserved.