New results are given on the solid-phase recrystallisation growth of Z
nSe. The orientation relationship between initial texture of the start
ing material and SPR grown crystals is studied by X-ray diffraction. T
wins are shown to be already present in the micrograins of the source
material from SEM and TEM observations. Some attempts to decrease twin
ning using the strain-anneal method are reported. The SPR kinetics is
studied under both Se and Zn pressure. The SPR growth is shown to be i
nhibited by residual donor impurities that have been identified to be
mainly Al, Cl and In by photoluminescence and resonant Raman scatterin
g experiments. Given the significant role of native defects in the SPR
growth kinetics, the concentration of Zn vacancies is roughly estimat
ed from lattice parameters measurements to be about 10(19) cm(-3) in t
he Se-rich samples by means of a vacancy model. Low-resistive n-type c
rystals are obtained by Al diffusion from Al-doped molten zinc. (C) 19
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