LOW DEFECT DENSITY, SUBSTRATE QUALITY CRYSTALS OF THE WIDE-GAP II-VI COMPOUNDS, OBTAINED BY PHYSICAL VAPOR TRANSPORT TECHNIQUE (PVT)

Authors
MYCIELSKI A LUSAKOWSKA E SZADKOWSKI A KOWALCZYK L
Citation
A. Mycielski et al., LOW DEFECT DENSITY, SUBSTRATE QUALITY CRYSTALS OF THE WIDE-GAP II-VI COMPOUNDS, OBTAINED BY PHYSICAL VAPOR TRANSPORT TECHNIQUE (PVT), Journal of crystal growth, 185, 1998, pp. 1044-1047
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
1044 - 1047
Database
ISI
SICI code
0022-0248(1998)185:<1044:LDDSQC>2.0.ZU;2-4
Abstract
It is demonstrated that substrate quality, 1 in. size single crystals of the wide-gap II-VI semiconductors: ZnSe, Zn(Se,S), ZnTe and (Cd,Zn) Te can be obtained by a simple, horizontal, low temperature, physical vapour transport (PVT) technique. The results of the characterization of the obtained crystals are presented. (C) 1998 Elsevier Science B.V. All rights reserved.