ENERGY-TRANSFER PROCESSES AND PHOTOLUMINESCENCE PROPERTIES OF HOMOGENEOUSLY-DOPED AND DELTA-DOPED ZNS-MN

Citation
W. Park et al., ENERGY-TRANSFER PROCESSES AND PHOTOLUMINESCENCE PROPERTIES OF HOMOGENEOUSLY-DOPED AND DELTA-DOPED ZNS-MN, Journal of crystal growth, 185, 1998, pp. 1123-1127
Citations number
9
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
1123 - 1127
Database
ISI
SICI code
0022-0248(1998)185:<1123:EPAPPO>2.0.ZU;2-W
Abstract
An investigation is reported of the energy transfer processes in ZnS:M n by photoluminescence spectroscopy. At temperatures >50 K, the lumine scence decay of homogeneously doped ZnS : Mn was strongly non-exponent ial due to non-radiative energy transfer processes. The concentration dependence of the effective lifetime was found to change with temperat ure. Analysis of the temperature dependence showed that the energy tra nsfer between Mn ions was active only for Mn concentrations >2%, and t hat the energy transfer between Mn ions was mediated by an electric di pole-dipole interaction. The delta-doped ZnS : Mn showed a faster deca y due to the enhanced overlap between 3d and s-p host states caused by lattice strain. From the temperature dependence, the two-dimensional confinement of energy transfer was observed for large spacings between doping planes. When the doping planes were brought close together, th e delta-doped samples behaved similarly to the homogeneously doped ZnS :Mn, indicating that the energy transfer was no longer two-dimensional ly confined. (C) 1998 Published by Elsevier Science B.V. All rights re served.