PD-DEFECT-COMPLEXES IN ZNTE AND CDTE AND INTERACTION WITH GROUP-V-ELEMENTS

In the II-VI compounds ZnTe and CdTe, tracer diffusion and perturbed a ngular correlation experiments revealed a hindered diffusion of Pd at elevated temperature in tellurium-rich material due to the formation o f Pd-metal-vacancy complexes. In metal-rich n-type material, Pd distri butes by diffusion over the entire sample volume. Additional group-V e lement implantation has different effects in ZnTe and CdTe: in metal-r ich ZnTe, the Pd diffusion is hindered and complex formation at Pd is found; in metal-rich CdTe, the Pd diffusion seems to be unchanged and, in the case of N, a complex is formed at elevated temperatures interp reted as consisting of interstitial Pd and interstitial N. (C) 1998 El sevier Science B.V. All rights reserved.