SPECTROSCOPY OF INTERFACE STATES IN HGTE HG1-XCDXTE SUPERLATTICES/

Citation
M. Vontruchsess et al., SPECTROSCOPY OF INTERFACE STATES IN HGTE HG1-XCDXTE SUPERLATTICES/, Journal of crystal growth, 185, 1998, pp. 1190-1194
Citations number
4
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
1190 - 1194
Database
ISI
SICI code
0022-0248(1998)185:<1190:SOISIH>2.0.ZU;2-E
Abstract
Information on interface states in HgTe/Hg1-xCdxTe superlattices has b een obtained via studies of interband transitions in an external magne tic held. Interband transitions can exhibit novel characteristic featu res if interface states are involved. For example, the magnetic field dispersion can be negative at sufficiently small magnetic field streng ths if the initial state is an interface state. We discuss in detail t he influences of the magnetic field strength, the well and barrier thi cknesses, and the temperature on the properties of interband transitio ns involving interface states. (C) 1998 Elsevier Science B.V. All righ ts reserved.