VALENCE-BAND PARAMETERS FOR HG1-XMGXTE EPITAXIAL LAYERS

Citation
K. Paesler et al., VALENCE-BAND PARAMETERS FOR HG1-XMGXTE EPITAXIAL LAYERS, Journal of crystal growth, 185, 1998, pp. 1209-1213
Citations number
6
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
185
Year of publication
1998
Pages
1209 - 1213
Database
ISI
SICI code
0022-0248(1998)185:<1209:VPFHEL>2.0.ZU;2-G
Abstract
Temperature dependent magneto-optical investigations of Hg1-xMgxTe epi taxial layers were performed in the infrared regime to determine the v alence band parameters in the framework of the quasi-germanium model. The sample alloy composition of x = 0.07 +/- 0.01 was chosen such that both the semimetallic and the semiconducting regimes could be studied in our experimental temperature interval. Analyzing the positions of electron cyclotron resonances and various interband transitions, the b and parameters were determined in both regimes. Very good agreement be tween experiment and theory is obtained with temperature independent v alence band parameters. (C) 1998 Published by Elsevier Science B.V. Al l rights reserved.