CRYSTALLINITY IMPROVEMENT OF HG1-XCDXTE FILMS GROWN BY A LIQUID-PHASEEPITAXIAL TECHNIQUE

Work was done, with emphasis on modifying substrate orientation and li quid-phase epitaxy (LPE) mode, to improve the crystallinity of Hg1-xCd xTe epitaxial layers. The results show that the epilayers grown on the 1.2 degrees-2 degrees off (1 1 1)A substrate exhibit better crystal q uality and fewer Te precipitates than those grown on other tilted subs trates. Further, an adequate meltetch of substrate before LPE provides a fresh surface for epitaxial growth, while a meltetch of the epilaye r at the end of LPE prevents spurious growth and melt sticking. (C) 19 98 Elsevier Science B.V. All rights reserved.