GROWTH AND CHARACTERIZATION OF ZN1-XBEXSE MIXED-CRYSTALS

Beryllium containing, wide-gap II-VI semiconducting compounds may offe r a possibility of a significant reduction of the defect propagation i n the active region and therefore increasing of II-VI lasers lifetimes due to more covalent bonding and lattice hardening [1] CCh. Verie, in : B. Gil, R.L. Aulombard (Eds.), Semiconductor Heteroepitaxy, Growth, Characterization and Device Applications, World Scientific, Singapore, 1995, p. 73]. Until now, the published papers were concerned thin fil ms [2,3] [F. Fischer, G. Landwehr, Th. Litz, H.J. Lugauer, U. Zehnder, Th. Gerhard, W. Ossau, A. Waag, J. Crystal Growth 175-176 (1997) 532; V. Bousquet, E. Tournie, M. Laugt, P. Vennegue's, J.P. Faurie, Appl. Phys. Lett.70 (1997) 3564] but the fundamental properties of Zn1-xBexS e bulk crystals have not been investigated as yet. This work deals wit h an experimental study of structural and photoluminescence properties of Zn1-xBexSe mixed crystals as a function of composition. (C) 1998 E lsevier Science B.V. All rights reserved.