MOSFET PARAMETER DEGRADATION AFTER FOWLER-NORDHEIM INJECTION STRESS

We have investigated the degradation of tunnel oxides due to Fowler-No rdheim electron injection from polysilicon gate. Tested devices are n- MOSFET normally used for Flash EPROM applications with four different technologies for the tunnel oxide layer. Stresses have been performed at different source and drain bias conditions for a total injected cha rge up to 1 C/cm(2). The oxide characteristics and degradation have be en determined comparing the MOSFET threshold voltage and transconducta nce peak for as received devices and after each stress step. (C) 1998 Elsevier Science Ltd.