A. Meinertzhagen et al., EFFECT OF THE DISCHARGING AND RECHARGING OF THE STRESS GENERATED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON THE LOW-FIELD LEAKAGE CURRENT, Microelectronics and reliability, 38(2), 1998, pp. 221-225
Low field leakage currents, through thin gate oxides of metal-oxide-se
miconductor capacitors, increase after negative high field stress. We
have observed that this increase could be reduced and even suppressed
if the trapped holes created by the stress were neutralized by applica
tion of low voltage pulses. We have also observed that these pulses ha
d the effect of making the recharge of the stress created slow states
more and more difficult. (C) 1998 Elsevier Science Ltd.