ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTIONS

Two types of electron traps, donor-like and acceptor-like, are created in the gate oxide of metal-oxide-semiconductor capacitors by Fowler-N ordheim electron injections. Electrical properties (areal density, cap ture cross-section, centroid) of each type of trap are determined by u sing the avalanche electron injection method and by combining capacita nce-voltage and current-voltage measurements. These properties are mea sured with regard to the Fowler-Nordheim fluence up to breakdown and f or bath injection modes (electrons injected either from the gate or fr om the substrate of capacitors). (C) 1998 Elsevier Science Ltd.