A PERCOLATIVE SIMULATION OF DIELECTRIC-LIKE BREAKDOWN

Authors
PENNETTA C GINGL Z KISS LB REGGIANI L DEVITTORIO M COLA A MAZZER M
Citation
C. Pennetta et al., A PERCOLATIVE SIMULATION OF DIELECTRIC-LIKE BREAKDOWN, Microelectronics and reliability, 38(2), 1998, pp. 249-253
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
2
Year of publication
1998
Pages
249 - 253
Database
ISI
SICI code
0026-2714(1998)38:2<249:APSODB>2.0.ZU;2-O
Abstract
Dielectric-like degradation of thin-film conductors is simulated up to final breakdown within a biased percolation model. As relevant indica tors we take the damage pattern, current distribution, resistance vari ation, failure lifetime and relative resistance fluctuations. The resu lts show that biased percolation predicts well several known features taking place close to the abrupt failure of thin films in close agreem ent with available experimental results. (C) 1998 Elsevier Science Ltd .